Memoria RAM DDR3 1.5V de 4GB Kingston

Características

• JEDEC standard 1.5V (1.425V ~1.575V) Power Supply

• VDDQ = 1.5V (1.425V ~ 1.575V)

• 667MHz fCK for 1333Mb/sec/pin

• 8 independent internal bank

• Programmable CAS Latency: 9, 8, 7, 6

• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock

• Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)

• 8-bit pre-fetch

• Burst Length: 8 (Interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write [either on the fly using A12 or MRS]

• Bi-directional Differential Data Strobe

• Internal(self) calibration: Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)

• On Die Termination using ODT pin

• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°C

• Asynchronous Reset

• PCB: Height 0.740” (18.75mm) or 1.180” (30.00mm)

Características:

• CL(IDD) 9 cycles

• Row Cycle Time (tRCmin) 49.125ns (min.)

• Refresh to Active/Refresh 260ns (min.)

• Command Time (tRFCmin)

• Row Active Time (tRASmin) 36ns (min.)

• Maximum Operating Power TBD W*

• UL Rating 94 V - 0

• Operating Temperature 0o C to 85o C

• Storage Temperature -55o C to +100o C

*Power will vary depending on the SDRAM used.